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1.
ACS Appl Mater Interfaces ; 16(8): 11125-11133, 2024 Feb 28.
Artigo em Inglês | MEDLINE | ID: mdl-38373224

RESUMO

Liquid crystals (LCs) have been adopted to induce tunable physical properties that dynamically originated from their unique intrinsic properties responding to external stimuli, such as surface anchoring condition and applied electric field, which enables them to be the template for aligning functional guest materials. We fabricate the fiber array from the electrically modulated (in-plain) nematic LC template using the chemical vapor polymerization (CVP) method. Under an electric field, an induced defect structure with a winding number of -1/2 contains a periodic zigzag disclination line. It is known that LC defect structures can trap the guest materials, such as particles and chemicals. However, the resulting fibers grow along the LC directors, not trapped in the defects. To show the versatility of our platform, nanofibers are fabricated on patterned electrodes representing the alphabets 'CVP.' In addition, the semifluorinated moieties are added to fibers to provide a hydrophobic surface. The resultant orientation-controlled fibers will be used in controllable smart surfaces that can be used in sensors, electronics, photonics, and biomimetic surfaces.

2.
ACS Appl Mater Interfaces ; 15(1): 1525-1534, 2023 Jan 11.
Artigo em Inglês | MEDLINE | ID: mdl-36538477

RESUMO

The top-gate structure is currently adopted in various flat-panel displays because of its diverse advantages such as passivation from the external environment and process compatibility with industries. However, the mobility of the currently commercialized top-gate oxide thin-film transistors (TFTs) is insufficient to drive ultrahigh-resolution displays. Accordingly, this work suggests metal-capped Zn-Ba-Sn-O transistors with top-gate structures for inducing mobility-enhancing effects. The fabricated top-gate device contains para-xylylene (PPx), which is deposited by a low-temperature chemical vapor deposition (CVD) process, as a dielectric layer and exhibits excellent interfacial and dielectric properties. A technology computer-aided design (TCAD) device simulation reveals that the mobility enhancement in the Al-capped (Zn,Ba)SnO3 (ZBTO) TFT is attributed not only to the increase in the electron concentration, which is induced by band engineering due to the Al work function but also to the increased electron velocity due to the redistribution of the lateral electric field. As a result, the mobility of the Al-capped top-gate ZBTO device is 5 times higher (∼110 cm2/Vs) than that of the reference device. These results demonstrate the applicability of top-gate oxide TFTs with ultrahigh mobility in a wide range of applications, such as for high-resolution, large-area, and flexible displays.

3.
Nanomaterials (Basel) ; 12(10)2022 May 12.
Artigo em Inglês | MEDLINE | ID: mdl-35630871

RESUMO

Silicon-based electrodes are widely recognized as promising anodes for high-energy-density lithium-ion batteries (LIBs). Silicon is a representative anode material for next-generation LIBs due to its advantages of being an abundant resource and having a high theoretical capacity and a low electrochemical reduction potential. However, its huge volume change during the charge-discharge process and low electrical conductivity can be critical problems in its utilization as a practical anode material. In this study, we solved the problem of the large volume expansion of silicon anodes by using the carbon coating method with a low-cost phenolic resin that can be used to obtain high-performance LIBs. The surrounding carbon layers on the silicon surface were well made from a phenolic resin via a solvent-assisted wet coating process followed by carbonization. Consequently, the electrochemical performance of the carbon-coated silicon anode achieved a high specific capacity (3092 mA h g-1) and excellent capacity retention (~100% capacity retention after 50 cycles and even 64% capacity retention after 100 cycles at 0.05 C). This work provides a simple but effective strategy for the improvement of silicon-based anodes for high-performance LIBs.

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